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Bluetooth LE Node Statistics
statistics object function of the bluetoothLENode object. The fields of this structure depend on the value of the Role property of the bluetoothLENode object. Bluetooth Technology Overview
Bluetooth Protocol Stack
Mathworks Matlab Bluetooth Toolbox
With the toolbox, you can configure, simulate, and analyze end-to-end Bluetooth communication links. You can create and reuse test benches to verify that your designs, prototypes, and implementations comply with the Bluetooth standard, including Bluetooth basic rate/enhanced data rate (BR/EDR) and low energy (LE). You can also assess coexistence, interference, localization, and LE Audio scenarios by modeling multiple layers of the Bluetooth protocol stack.
MQB-sniffer for Volkswagen Golf MK7
Bluetooth LE Direction Finding for Tracking Node Position
This example shows you how to track the 2-D or 3-D position of a Bluetooth® low energy (LE) node by using Bluetooth® Toolbox.
Using this example, you can:
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Simulate direction-finding packet exchange in the presence of radio frequency (RF) front end impairments, path loss, and additive white Gaussian noise (AWGN).
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Track the node position by using Bluetooth direction-finding features and position estimation techniques.
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Improve the location accuracy by using a Kalman filter from Sensor Fusion and Tracking Toolbox™.
Bluetooth Protocol Stack
Bluetooth Low Energy Communication
MOS管源极和漏极的区别
MOS管的N沟道与P沟道之间的关系
NMOS的特性，Vgs大于一定的值就会导通，适合用于源极接地时的情况（低端驱动），只要栅极电压达到4V或10V就可以了。
PMOS的特性，Vgs小于一定的值就会导通，适合用于源极接VCC时的情况（高端驱动）。但是，虽然PMOS可以很方便地用作高端驱动，但由于导通电阻大，价格贵，替换种类少等原因，在高端驱动中，通常还是使用NMOS。
普遍用于高端驱动的NMOS，导通时需要是栅极电压大于源极电压。而高端驱动的MOS管导通时源极电压与漏极电压（VCC）相同，所以这时栅极电压要比VCC大4V或10V。如果在同一个系统里，要得到比VCC大的电压，就要专门的升压电路了。很多马达驱动器都集成了电荷泵，要注意的是应该选择合适的外接电容，以得到足够的短路电流去驱动MOS管。